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سالهفتهIDTitleApplNoIPCApplicantSubgroupزیر گروهرشته شرحDescription
202603WO/2025/216783PIEZOELECTIC DEVICES INCLUDING COMPOUND SEMICONDUCTOR MATERIALS AND A SUPERLATTICE LAYERUS2025/012005H01L 21/20ATOMERA INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2025/219278PLANAR DRIVE SYSTEM AND METHOD FOR OPERATING A PLANAR DRIVE SYSTEMEP2025/060108H01L 21/67BECKHOFF AUTOMATION GMBHELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2025/223913METHOD FOR DETECTING A BLOCKAGE STATE, AND PNEUMATIC SYSTEMEP2025/060233H01L 21/67FESTO SE & CO. KGELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2025/223920METHOD FOR OPERATING A PNEUMATIC SYSTEM AND PNEUMATIC SYSTEM FOR INDUSTRIAL AUTOMATIONEP2025/060262H01L 21/67FESTO SE & CO. KGELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2025/223970METHOD FOR SYNCHRONOUSLY MOVING AT LEAST TWO ACTUATOR ELEMENTS, AND PNEUMATIC SYSTEMEP2025/060532H01L 21/67FESTO SE & CO. KGELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2025/223972METHOD FOR OPERATING A PNEUMATIC SYSTEM AND PNEUMATIC SYSTEM FOR INDUSTRIAL AUTOMATIONEP2025/060543H01L 21/67FESTO SE & CO. KGELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2025/241846EMBEDDED PACKAGING STRUCTURE, POWER SUPPLY, AND MANUFACTURING METHODCN2025/091751H01L 25/16HUAWEI TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/011516PARTICLE REMOVAL METHOD AND APPARATUSCN2024/110549H01L 21/67SHANGHAI CHUANXIN SEMICONDUCTOR CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/011552CASSETTE DEVICE AND WAFER INSERTING MACHINECN2024/118084H01L 21/677TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/011645PREPARATION METHOD FOR JUNCTION-LESS TRANSISTORCN2024/134141H01L 21/76GUANGDONG GREATER BAY AREA INSTITUTE OF INTEGRATED CIRCUIT AND SYSTEMELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/011710MANUFACTURING METHOD FOR THIN FILM RESISTOR AND THIN FILM RESISTOR STRUCTURECN2024/143716H01L 23/64CSMC TECHNOLOGIES FAB2 CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/011733EMBEDDED PACKAGING STRUCTURE, POWER SUPPLY MODULE AND ELECTRONIC DEVICECN2025/071962H01L 23/31HUAWEI TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/011740CHIP PACKAGING STRUCTURE AND PACKAGING METHOD THEREFORCN2025/073041H01L 23/31HUAWEI TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/011743CONNECTION FILM AND MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR PACKAGING STRUCTURE AND PACKAGING METHOD THEREFORCN2025/073628H01L 23/31HUAWEI TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/011880CMOS DEVICE AND MANUFACTURING METHOD THEREFORCN2025/089313H01L 21/283SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/012015SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHODCN2025/098923H01L 21/67ACM RESEARCH (SHANGHAI) , INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/012018CO-PACKAGED OPTICS STRUCTURE HAVING OPTICAL PORT PROTECTION AND MANUFACTURING METHOD THEREFORCN2025/099069H01L 21/56NATIONAL CENTER FOR ADVANCED PACKAGING CO., LTDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/012034CHIP PACKAGING STRUCTURE AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICECN2025/100183H01L 23/538HUAWEI TECHNOLOGIES CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/012110EPITAXIAL FILM GROWTH STATE DETECTION METHOD, AND DETECTION SYSTEMCN2025/102995H01L 21/66CHUYUN TEK (SHANGHAI) CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/012584A LEAD FRAME PACKAGE FOR AN RF APPLICATION AND A METHOD OF MANUFACTURING A LEAD FRAME PACKAGEEP2024/069503H01L 23/495TELEFONAKTIEBOLAGET LM ERICSSON (PUBL)ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/012658METHOD FOR PRODUCING A GROWTH SUBSTRATE, METHOD FOR PRODUCING AN EPITAXIAL SILICON CARBIDE LAYER, GROWTH SUBSTRATE, AND EPITAXIAL SILICON CARBIDE LAYEREP2025/065659H01L 21/20HITACHI ENERGY LTDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/012661APPARATUS FOR HANDLING A WAFER AND METHOD OF HANDLING A WAFEREP2025/065716H01L 21/67METRYX LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/012845SUBSTRATE CARRIER, SUBSTRATE, AND METHOD FOR COATING A SUBSTRATEEP2025/068771H01L 21/687JENOPTIK OPTICAL SYSTEMS GMBHELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/013063MOUNTING DEVICE FOR FLEXIBLE COMPONENTSEP2025/069450H01L 21/67FESTO SE & CO. KGELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/013130APPARATUS AND METHOD FOR NON-IMMERSIVE WET-CHEMICAL TREATMENT OF A SUBSTRATE AND DEVICE FOR HOLDING THE SUBSTRATEEP2025/069588H01L 21/673ATOTECH DEUTSCHLAND GMBH & CO. KGELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/013337AN APPARATUS FOR PROCESSING A SURFACE OF A SUBSTRATEFI2025/050392H01L 21/677BENEQ OYELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/013482SEMICONDUCTOR DEVICE WITH A JUNCTION IN BACKSIDE POWER DELIVERY NETWORKIB2025/056493H01L 23/528INTERNATIONAL BUSINESS MACHINES CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/013491OXIDANT GAS OR OXIDANT VAPOR GENERATION AND DELIVERY SYSTEMS AND METHODSIB2025/056649H01L 21/67RASIRC, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/013769POWER CONVERSION APPARATUS AND METHOD FOR COOLING POWER CONVERSION APPARATUSJP2024/024826H01L 25/07TMEIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/013841SUBSTRATE PROCESSING DEVICE, AND SUBSTRATE PROCESSING METHODJP2024/025103H01L 21/304TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/013944SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERSION DEVICE COMPRISING SAMEJP2024/037527H01L 23/28MITSUBISHI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/013962SEMICONDUCTOR SYSTEMJP2025/003699H01L 25/00MURATA MANUFACTURING CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/013999SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, AND SUBSTRATE PROCESSING APPARATUSJP2025/012912H01L 21/316KOKUSAI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014009SUBSTRATE PROCESSING SYSTEM AND INFORMATION PROCESSING DEVICEJP2025/014777H01L 21/304TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014030ADHESIVE TAPE FOR ELECTRONIC COMPONENT PROCESSING AND PRODUCTION METHOD FOR ELECTRONIC COMPONENTJP2025/016496H01L 21/301DAI NIPPON PRINTING CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014096SEMICONDUCTOR MODULEJP2025/019177H01L 23/36IHI CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014132SEMICONDUCTOR DEVICE AND VEHICLEJP2025/020882H01L 25/00FUJI ELECTRIC CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014135SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE, AND SILYLATED COMPOSITIONJP2025/021099H01L 21/306CENTRAL GLASS COMPANY, LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014152DEVICE FOR MANUFACTURING POWER MODULE AND METHOD FOR MANUFACTURING POWER MODULEJP2025/021629H01L 23/36MITSUBISHI ELECTRIC CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014186OXIDE SEMICONDUCTOR THIN FILM, COMPOSITE THIN FILM, AND SPUTTERING TARGETJP2025/022109H01L 21/363KOBELCO RESEARCH INSTITUTE, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014200APPARATUS FOR PRODUCING CLEANING WATER FOR ELECTRONIC DEVICE, AND METHOD FOR PRODUCING SAID CLEANING WATERJP2025/022255H01L 21/304KURITA WATER INDUSTRIES LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014201APPARATUS AND METHOD FOR MANUFACTURING CLEANING WATER FOR ELECTRONIC DEVICEJP2025/022256H01L 21/304KURITA WATER INDUSTRIES LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014225PATTERN-FORMING DEVICE, PATTERN-FORMING METHOD, AND STORAGE MEDIUMJP2025/022678H01L 21/027TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014228ETCHING METHOD AND PLASMA TREATMENT DEVICEJP2025/022740H01L 21/3065TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014229ETCHING METHOD AND PLASMA TREATMENT DEVICEJP2025/022743H01L 21/3065TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014232SEMICONDUCTOR DEVICEJP2025/022767H01L 25/07DENSO CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014233SEMICONDUCTOR DEVICEJP2025/022768H01L 25/00DENSO CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014234SEMICONDUCTOR DEVICEJP2025/022769H01L 25/07DENSO CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014248IMAGE PROCESSING SYSTEM, INSPECTION SYSTEM, AND IMAGE PROCESSING METHODJP2025/022935H01L 21/66TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014263PLASMA PROCESSING DEVICE, METHOD FOR MANUFACTURING ELECTROSTATIC CHUCK, AND METHOD FOR REGENERATING ELECTROSTATIC CHUCKJP2025/023150H01L 21/3065TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014278HEIGHT ADJUSTMENT TOOLJP2025/023278H01L 21/027TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014290SUBSTRATE PROCESSING DEVICEJP2025/023456H01L 21/027TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014316COMPUTER PROGRAM, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING DEVICEJP2025/023656H01L 21/02TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014325SEMICONDUCTOR DEVICEJP2025/023785H01L 25/07ROHM CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014335SEMICONDUCTOR DEVICE MANUFACTURING METHODJP2025/023868H01L 21/66HAMAMATSU PHOTONICS K.K.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014399PROTECTIVE SHEETJP2025/024290H01L 21/683NITTO DENKO CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014430COMPOSITION FOR FORMING COATING FILM FOR FOREIGN SUBSTANCE REMOVAL AND SEMICONDUCTOR SUBSTRATEJP2025/024446H01L 21/304NISSAN CHEMICAL CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014463CERAMIC CIRCUIT BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING CERAMIC CIRCUIT BOARDJP2025/024617H01L 23/13NITERRA MATERIALS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014507ELECTROSTATIC CHUCK MEMBER AND ELECTROSTATIC CHUCK DEVICEJP2025/024797H01L 21/683SUMITOMO OSAKA CEMENT CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014513CRYSTALLINE OXIDE FILM, THIN FILM TRANSISTOR, AND ELECTRONIC APPARATUSJP2025/024830H01L 21/363IDEMITSU KOSAN CO.,LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014760HEAT SINK STRUCTUREKR2025/008702H01L 23/467LS ELECTRIC CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014763LIGHT-EMITTING ELEMENT, AND DISPLAY DEVICE AND ELECTRONIC DEVICE COMPRISING SAMEKR2025/008749H01L 25/075SAMSUNG DISPLAY CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014787SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD USING SAMEKR2025/009214H01L 23/00PSK HOLDINGS INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014840DISPLAY DEVICE, ELECTRONIC DEVICE, AND METHOD FOR PRODUCING DISPLAY DEVICEKR2025/009743H01L 25/075SAMSUNG DISPLAY CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/014925DISPLAY DEVICE, MANUFACTURING METHOD THEREFOR AND ELECTRONIC DEVICEKR2025/009975H01L 25/075SAMSUNG DISPLAY CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015021CARRIER FOR HOLDING ELECTRONIC COMPONENTS DURING VISUAL INSPECTION, VISUAL INSPECTION DEVICE AND INSPECTION METHODNL2025/050338H01L 21/683BESI NETHERLANDS B.V.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015022DEVICE, SYSTEM AND METHOD FOR PUNCHING ELECTRONIC COMPONENTSNL2025/050339H01L 21/67BESI NETHERLANDS B.V.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015183SYSTEMS AND METHODS FOR FORMING THERMAL INTERFACE MATERIAL ON SUBSTRATESUS2025/024960H01L 21/02APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015192CHEMICAL ETCH USING SELECTIVE ION IMPLANTATIONUS2025/027950H01L 21/3065TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015194METHOD PROCESSING METAL FEATURES IN A SEMICONDUCTOR SUBSTRATEUS2025/027975H01L 21/3213TOKYO ELECTRON LIMITEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015225CONDUCTIVE STRUCTURE WITH MULTIPLE SUPPORT PILLARSUS2025/031924H01L 23/00QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015261PLASMA ENHANCED NUCLEATION LAYER FORMATIONUS2025/034384H01L 21/768APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015279MULTI-LAYERED EPITAXIAL STACK FORMED IN A PRESENCE OF A HIGHER ORDER SILICON PRECURSORUS2025/034927H01L 21/02APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015282PACKAGE COMPRISING INTEGRATED DEVICE AND A METALLIZATION PORTIONUS2025/034943H01L 23/538QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015285MOLD COMPOUND EMBEDDED DEVICE COOLING STRUCTUREUS2025/035064H01L 23/427QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015312SEMICONDUCTOR DEVICE ASSEMBLIES WITH DISCRETE MEMORY ARRAYS AND CMOS DEVICES CONFIGURED FOR EXTERNAL CONNECTIONUS2025/035810H01L 23/538MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015321POWER BASED DISTRIBUTION OF MEMORY OPERATIONSUS2025/035883H01L 25/065MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015372REMOTE ICR RADICAL DEPOSITION OF TUNABLE LOW-K DIELECTRIC FILMSUS2025/036400H01L 21/02APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015391MEMORY IN PACKAGE DEVICES AND ASSOCIATED SYSTEMS AND METHODSUS2025/036463H01L 25/16MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015394HIGH DIE STACK PACKAGE WITH VERTICAL DIE-TO-DIE INTERCONNECTSUS2025/036474H01L 25/065MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015395VERTICALLY INTEGRATED COMPUTING AND MEMORY SYSTEMS AND ASSOCIATED DEVICES AND METHODSUS2025/036477H01L 25/16MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015396HIGH DIE STACK PACKAGE WITH SECONDARY INTERPOSERUS2025/036483H01L 25/065MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015398HIGH DIE STACK PACKAGE WITH MODULAR STRUCTUREUS2025/036492H01L 25/065MICRON TECHNOLOGY, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015399ETCHING APPARATUS THAT OSCILLATE WAFERS DURING ETCHINGUS2025/036493H01L 21/67GLOBALWAFERS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015402DEVICES AND METHODS INVOLVING THERMALLY-CONDUCTIVE DEVICES USING SUBSTRATEUS2025/036510H01L 23/373THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITYELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015403NITRIDE LAYER FORMATION BY CYCLIC DEPOSITION AND TREATMENTUS2025/036516H01L 21/02LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015408SYSTEMS FOR TRANSPORTING A PLURALITY OF SEMICONDUCTOR STRUCTURES, WAFER BOATS AND METHODS FOR HEATING A SET OF SEMICONDUCTOR STRUCTURESUS2025/036559H01L 21/673GLOBALWAFERS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015436PARTICLE DEFECT PREDICTION AND CORRECTION BASED ON PROCESS CHAMBER MODELINGUS2025/036618H01L 21/67APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015437METHODS TO ENHANCE AND CHARACTERIZE OXYGEN PRECIPITATION INDUCED DEFECTS DURING A WAFER POLISHING SEQUENCEUS2025/036619H01L 21/66GLOBALWAFERS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015584CHAMBER BODY WITH TRENCH FOR RF TRANSMISSION LINESUS2025/036888H01L 21/67APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015594DISPLAY APPARATUS AND METHOD OF MANUFACTURING A DISPLAY APPARATUSUS2025/036911H01L 25/075CORNING INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015619METHODS OF PROCESSING SEMICONDUCTOR-ON-INSULATOR STRUCTURES USING CLEAN-AND-ETCH OPERATIONUS2025/036949H01L 21/02GLOBALWAFERS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015631INTEGRATED METAL AND METAL NITRIDE DEPOSITIONUS2025/036966H01L 21/285LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015641SYSTEM WITH 3D CONDUCTIVE EXTERIOR ROUTING AND METHOD OF FABRICATIONUS2025/036983H01L 23/528BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEMELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015645INTEGRATED HEAT SPREADER SYSTEM AND METHODUS2025/036988H01L 23/46BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEMELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015681STRESS CONTROL OF THINNED EPITAXIAL SILICON DEVICES AND MEMS STRUCTURESUS2025/037051H01L 21/02KLA CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015698METHODS FOR DIE-TO-WAFER AND WAFER-TO-WAFER BONDINGUS2025/037088H01L 23/544BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEMELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015735DETACHABLE MID TEMP ELECTROSTATIC CHUCK (ESC) FOR PROCESS CHAMBERUS2025/037155H01L 21/687APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015753DYNAMIC PROCESS CONTROL IN ELECTRONIC DEVICE MANUFACTURINGUS2025/037190H01L 21/67APPLIED MATERIALS, INC.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015770METHODS FOR TUNABLE DIELECTRIC THICKNESS OF A SEMICONDUCTOR SUBSTRATE USING BACK SURFACE HEATINGUS2025/037223H01L 21/02GLOBALWAFERS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015773METHODS FOR SEMICONDUCTOR SUBSTRATE PROCESSING BY DENSIFYING A DIELECTRIC LAYERUS2025/037227H01L 21/02GLOBALWAFERS CO., LTD.ELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015784MASK LINERUS2025/037249H01L 21/311LAM RESEARCH CORPORATIONELECTRICITYالکتریسیتهدانش هسته ای
202603WO/2026/015910INTEGRATED CIRCUIT DEVICE HAVING A TWO-PHASE THERMAL MANAGEMENT DEVICEUS2025/044496H01L 23/427QUALCOMM INCORPORATEDELECTRICITYالکتریسیتهدانش هسته ای